What question did this study set out to answer?

To develop a visible-spectrum GaAlAs inner stripe laser with stabilized optical mode operation using a p-type GaAs substrate.

March 1, 1982Applied Physics Letters

Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using p-GaAs substrate

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Authors

SYShuji YamamotoKyoto University HHH. HayashiKDDI Research (Japan)SYS. YanoNational Archives and Records Administration

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Implication

Experimental study demonstrates low threshold currents and stabilized modes in GaAlAs V-channel substrate lasers, indicating effective internal current and optical confinement.

Key Points

To develop a visible-spectrum GaAlAs inner stripe laser with stabilized optical mode operation using a p-type GaAs substrate.
Grew a thin n-GaAs layer on a p-GaAs substrate to facilitate internal current confinement within an etched V-channel.
Fabricated a built-in optical waveguide within the V-channel structure to control laser mode dynamics.
Achieved continuous wave (cw) threshold currents between 35 mA and 45 mA in the 770–790 nm visible wavelength range.
Observed highly stable transverse mode and single longitudinal mode operation driven by the built-in optical waveguide.

Cite This Study

Yamamoto et al. (1982) studied this question.

synapsesocial.com/papers/6a7067f5660549caf2c4fcb4 https://doi.org/10.1063/1.93107

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Implication

Experimental study demonstrates low threshold currents and stabilized modes in GaAlAs V-channel substrate lasers, indicating effective internal current and optical confinement.

Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using p-GaAs substrate

Discussion

Member takes

Implication

Key Points

Cite This Study

Visible GaAlAs V-channeled substrate inner stripe laser with stabilized mode using p-GaAs substrate

Discussion

Member takes

Implication

Key Points

Cite This Study

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