A mode controlled GaInAsP/InP (λ=1.3 μm) etched laser with a lens-like narrow strip waveguide along the <01> direction has been fabricated. The minimum threshold current was 160 mA for 170 μm cavity length, and a single longitudinal mode operation has been obtained up to 1.3 times the threshold.
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Moriki et al. (1981) studied this question.