GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer

This is the authors' abstract. We don't add key points for this paper.

The realisation of GaAs-based self-aligned lasers based on a single overgrowth, and avoiding exposure of AlGaAs during fabrication, is demonstrated. An n-doped InGaP layer is utilised for both electrical and optical confinement, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser.