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October 28, 2021Optics ExpressOpen Access

InAs/GaAs quantum dot laser epitaxially grown on on-axis (001) GaAsOI substrate

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Authors

HLHao LiangTJTingting JinCCChaodan Chi

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Overview

Experimental study demonstrates functional pulsed operation of InAs quantum dot lasers on GaAsOI substrates, highlighting feasibility for silicon-integrated photonic circuits.

Key Points

  • To fabricate and evaluate communication-band InAs/GaAs quantum dot ridge waveguide lasers monolithically grown on on-axis (001) GaAs-on-insulator substrates for optical interconnection.
  • Fabricated GaAs-on-insulator (GaAsOI) platforms by combining an ion-slicing technique with optimized surface treatment processes.
  • Grew InAs/In0.13Ga0.87As/GaAs dot-in-well (DWELL) laser structures on GaAsOI substrates using molecular beam epitaxy (MBE).
  • Characterized device static performance, including threshold current density, slope efficiency, and output power, under pulsed operation at 20 °C.
  • Achieved room-temperature (20 °C) pulsed laser operation for InAs dot-in-well structures monolithically integrated onto GaAsOI substrates.
  • Obtained static device performance in threshold current density, slope efficiency, and output power that matches devices grown on native GaAs substrates without reported numerical degradation.

Cite This Study

Liang et al. (2021) studied this question.

synapsesocial.com/papers/6a75843ffbccc8f4fd1607e5https://doi.org/10.1364/oe.438678
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