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In this paper, we will present the results of the InAs/GaAs quantum dot laser diode (QDLD) utilizing MOCVD system. GaAs/Si template has only 1.5 × 107 cm-2 of threading dislocation density and the QDLD on GaAs substrate shows continuous-wave operation characteristics up to 75 °C.
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Kim et al. (2024) studied this question.
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