The photoluminescence spectrum and absorption spectrum as well as resonant Raman scattering tuned by pressure in heavily doped CdS have been studied. The pressure coefficients of shallow levels (I₂ and I₁) and deep levels (G₅ and R) are measured. A new optical-absorption method under pressure was developed and the shift of band gap with pressure of CdS in the direct-band-gap wurtzite phase and indirect-band-gap rock-salt phase was measured. From the experimental results of resonant Raman scattering tuned by pressure we conclude that at about 27 kbar CdS undergoes a complete phase transition from the wurtzite phase to the rock-salt phase. After the phase transition there is no two-phase mixture, and the material still has semiconductor characteristics.
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Zhao et al. (1989) studied this question.
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