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From an electron beam irradiation and annealing experiment on LPE GaAs, we have shown that the E v +0.51 eV level appeared in Fe-doped wafers only after irradiation and annealing at 200 C. Thus it is pointed out that the Ga-vacancies are necessary for Fe to form such a deep state in GaAs.
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Ikoma et al. (1981) studied this question.
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