We report on a new GaAlAs/GaAs semiconductor laser, the Twin Channel Laser, consisting of two closely spaced channel substrate planer (CSP)-type lasers having high cw power (50–80 mW), high differential efficiency (45–55%), low beam divergence (4–6° by 25°), almost single longitudinal mode operation at high output power (50 mW), and high T0 (180°< T0 < 200°). The favorable output characteristics are related to the strong coupling between the individual emitters which is a consequence of the large optical gain between the emitters.
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Figueroa et al. (1984) studied this question.
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