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October 1, 1969Journal of Applied Physics

Optical Properties of n-Type GaAs. II. Formation of Efficient Hole Traps during Annealing in Te-Doped GaAs

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CHC. J. HwangHewlett-Packard (United States)

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C. J. Hwang (1969) studied this question.

synapsesocial.com/papers/6a8290d0409efddc54d4a33dhttps://doi.org/10.1063/1.1657236
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