Phased arrays of buried-ridge InP/InGaAsP diode lasers

This is the authors' abstract. We don't add key points for this paper.

Phase-locked arrays of buried-ridge InP/InGaAsP lasers, emitting at 1.3 μm, were grown by liquid phase epitaxy. The arrays consist of index-guided, buried-ridge lasers which are coupled via their evanescent optical fields. This index-guided structure makes it possible to avoid the occurrence of lower gain in the interchannel regions. As a result, the buried-ridge arrays oscillate mainly in the fundamental supermode, which yields single lobed, narrow far-field patterns. Single lobed beams less than 4° in width were obtained from buried-ridge InP/InGaAsP phased arrays up to more than twice the threshold current.