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Properties of Ge-doped In0.5Ga0.5P grown by liquid phase epitaxy were investigated by Hall effect, capacitance-voltage, photoluminescence, and electroluminescence measurements. The Ge dopant in InGaP shows amphoteric behavior with a compensation ratio (Na/Nd) of about 0.4. The activation energies of donor and acceptor were measured to be 47 and 58 meV, respectively. The deep acceptor transition related to Ge complex is also observed by luminescence measurements.
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Lee et al. (1993) studied this question.
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