Random-deposition models for thin-film epitaxial growth

The simple on-top site random-deposition model for film growth on a simple-cubic (100) substrate is extended to other adsorption-site geometries and crystal structures. Nontrivial statistical correlations within the growing film typically result. However, the master equations can be solved exactly to elucidate, e.g., growth kinetics, Bragg intensity (IBr) behavior for surface diffraction, and spatial correlations within the film. Other techniques facilitate analysis of the percolative structure of intralayer islands. For random deposition at fourfold hollow sites on a face-centered cubic (100) substrate, despite the absence of diffusion, there are distinct IBr oscillations similar to those observed experimentally during deposition of Pt on Pd(100) at low temperature.