Observation of Resonant Impurity States in Semiconductor Quantum-Well Structures

Resonant Raman scattering experiments on GaAs(Si doped)-AlₓGa_1-xAs quantum-well structures show transitions involving the ground state of the donors and narrow resonant donor states derived from higher conduction subbands. These new impurity-related features, which occur at slightly higher energies than the associated conduction intersubband excitations, have been studied as a function of power density, temperature, and well width.