The effect of hydrogen on strontium bismuth tantalate (SrBi2Ta2O9; SBT) ferroelectric capacitors is investigated. Using several analytical techniques such as x-ray diffraction, electron diffraction, Auger electron, scanning and transmission electron microscopies, the structural and compositional changes in the ferroelectric film are studied as a function of annealing gas and temperature. The mechanism for hydrogen induced damage to the capacitor is identified. Measurements show that the hydrogen induces both structural and compositional changes in the ferroelectric film. Hydrogen reacts with the bismuth oxide to form bismuth and the reduced bismuth diffuses out of the SBT film causing the electrodes to peel.
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Zafar et al. (1997) studied this question.
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