An epitaxial microscopic capacitor array of Pb(Zr, Ti)O 3 /SrRuO 3 with 0.5-to 2-µ m squares was fabricated by electron-beam lithography and Ar-ion etching on a SrTiO 3 (001) substrate. Atomic force microscopic observation revealed that line-and-spacing larger than 1 µ m assures adequate separation between capacitors. A thin barrier is formed on the terrace edge of the capacitors due to re-deposition of Ar-ion etched oxide.
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Hiratani et al. (1997) studied this question.
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