Pressure-Induced Electronic Mixing and Enhancement of Ferromagnetic Ordering in EuX(X=Te, Se, S, O) Magnetic Semiconductors

The pressure- and anion-dependent electronic structure of EuX (X=Te, Se, S, O) monochalcogenides is probed with element- and orbital-specific x-ray absorption spectroscopy in a diamond anvil cell. An isotropic lattice contraction enhances the ferromagnetic ordering temperature by inducing mixing of Eu 4f and 5d electronic orbitals. Anion substitution (Te-->O) enhances competing exchange pathways through spin-polarized anion p states, counteracting the effect of the concomitant lattice contraction. The results have strong implications for efforts aimed at enhancing FM exchange interactions in thin films through interfacial strain or chemical substitutions.