Long wavelength GaInNAs/GaAs quantum-well heterostructures grown by solid-source molecular-beam epitaxy

We have investigated as-grown Ga1−xInxNyAs1−y/GaAs quantum-well heterostructures (QWHs) prepared by solid-source molecular-beam epitaxy (SS-MBE). We show that the QWH properties appear to depend strongly on the growth technique and that SS-MBE emerges as a technique of choice for growing these QWHs. We demonstrate photoluminescence emission at wavelength as long as 1.43 μm at 295 K, and up to 1.68 μm at 10 K. This shows that development of 1.55 μm optoelectronics based on the Ga1−xInxNyAs1−y/GaAs materials system may now be reasonably thought of.