Ga 0.3 In 0.7 N x As 1−x (x⩽0.04) and InNxAs1−x (x⩽0.02) self-assembled quantum dots are fabricated on GaAs by gas-source molecular beam epitaxy. The effect of growth temperature on island density, island size, and optical properties is studied in detail. From a single layer of Ga0.3In0.7N0.04As0.96 dots embedded in GaAs, peak photoluminescence wavelength of up to 1.52 μm is detected at room temperature. Thus, the fabrication of 1.3 and 1.55 μm GaInNAs quantum dot lasers on GaAs becomes feasible.
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Sopanen et al. (2000) studied this question.
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