Arsenic pressure dependence of interdiffusion of AlGaAs/GaAs hetero-interface at a high temperature has been studied by masuring the wavelength shift of photoluminescence in a multi quantum well. It was found that the interdiffusion at the temperature of 850°C was minimized under arsenic pressure of 100 Torr and it was enhanced both under the lower and higher arsenic pressure. Also the degradation of photoluminescence intensity was observed only under the higher arsenic pressure. These properties are considered to be caused by excess vacancies of gallium and aluminum, and their assosiated defects.
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Furuya et al. (1987) studied this question.
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