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Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and are ideal materials for applications in electronic devices. Significant progress has been made on CNT electronics, and a doping-free approach has emerged from this research. This approach utilizes the contact control on the properties of field-effect transistors (FETs), preserving the perfect lattice of the CNT making it possible for CNT FETs to outperform state-of-the-art Si devices. Both n -type and p -type CNT FETs with near ballistic performance limits have been fabricated, symmetric CMOS devices have been demonstrated, and pass-transistor-logic, a circuit configuration that is more efficient than CMOS is being explored.
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Peng et al. (2014) studied this question.
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