Long-wavelength strain-compensated GaAsSb quantum-well heterostructures laser grown by metalorganic chemical vapor deposition

We report data on strain-compensated GaAsSb double-quantum-well lasers having a type-I band alignment and grown by metalorganic chemical vapor deposition on GaAs substrates. In order to compensate for strain effects and to establish a type-I band alignment, tensile-strained higher-band-gap GaAsP quantum-well barriers have been employed. A lasing wavelength of λ∼1.200 μm from a 500 μm long device at 1.15Ith has been achieved at room temperature in pulsed-mode operation. The maximum output power was 20 mW for the same device. A low threshold current density of 608.0 A/cm2 was obtained for 1370 μm long and 60 μm stripe lasers. The calculated internal quantum efficiency and internal loss were 33.8% and 8.4 cm−1, respectively. We also calculated an infinite cavity length threshold current density of 265 A/cm2. From these data, a gain constant G0∼1728 cm−1 and transparency current density of 135 A/cm2 were calculated. The result showed that the strain-compensated GaAsSb quantum wells are promising active materials for 1.3 μm vertical-cavity surface-emitting lasers.