Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm

We report data on GaAsSb single-quantum-well lasers grown on GaAs substrates. Room temperature pulsed emission at 1.275 μm in a 1250-μm-long device has been observed. Minimum threshold current densities of 535 A/cm2were measured in 2000-μm-long lasers. We also measured internal losses of 2-5 cm/sup -1/, internal quantum efficiencies of 30%-38% and characteristic temperatures T0of 67/spl deg/C-77/spl deg/C. From these parameters, a gain constant G0of 1660 cm/sup -1/ and a transparency current density J/sub tr/ of 134 A/cm2were calculated. The results indicate the potential for fabricating 1.3-μm vertical-cavity surface-emitting lasers from these materials.