This paper describes the use of photoluminescence measurements to characterise the processing of annealed Si + implanted GaAlAs/GaAs MQW structures. The photoluminescence band-edge emission gives a direct measure of the progress of the mixing of the MQW material and the optical wave confinement factor. In addition we have observed an emission from deeper radiative defects which correlates with the waveguide attenuation for long anneal times.
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Homewood et al. (1989) studied this question.
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