Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
July 15, 1982Applied Physics Letters

Optical absorption of silicon between 1.6 and 4.7 eV at elevated temperatures

View Full Paper
Ask AI
Bookmark
Share

Authors

GJG. E. JellisonOak Ridge National LaboratoryFMF. A. ModineCalifornia Institute of Technology

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Jellison et al. (1982) studied this question.

synapsesocial.com/papers/6a82a3301d8eddfbf50f6ae4https://doi.org/10.1063/1.93454
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Macroscopic theory of pulsed-laser annealing. I. Thermal transport and melting1981 · 457 citations
  2. 2Optical constants for silicon at 300 and 10 K determined from 1.64 to 4.73 eV by ellipsometry1982 · 181 citations
  3. 3Temperature dependence of the optical properties of silicon1979 · 287 citations
  4. 4Temperature effects in Schottky-barrier solar cells1976 · 16 citations
  5. 5Wavelength-scanning polarization-modulation ellipsometry: some practical considerations1978 · 76 citations