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Micrometer thick layers of ZnSe and other dielectric materials have been grown with high thickness uniformity using the new ultrahigh vacuum (UHV) molecular beam deposition (MBD) technique. Optical techniques have been employed to demonstrate that variations in thickness down to as little as ±0.15% over 90 mm diam can be achieved.
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Hale et al. (1990) studied this question.
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