Dilute nitride structures offer the possibility of growing tensile-strained quantum well lasers on InP substrate emitting in the telecommunication L band. The authors have calculated the characteristics of InGaAs(N)∕InAsP∕InP quantum well structures and compared to the ones of N-free quantum well structures. It appears that the introduction of a fraction of nitrogen as small as 0.3% is enough to pass over the emission wavelength of 1.57μm and induces an increase of the material gain by a factor 3.
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Carrère et al. (2006) studied this question.
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