Room temperature continuous-wave photopumped operationof 1.22 µm GaInNAs/GaAs single quantum well vertical-cavity surface-emittinglaser

Photopumped operation of a vertical-cavity surface-emitting laser using a single GaInNAs/GaAs quantum well active layer is demonstrated for the first time. The device lases at continuous-wave at room temperature, with an active wavelength of 1.22 µm and a threshold pump intensity of 3–5 kW/cm2, for an equivalent current density of 2–3 kA/cm2.