Implantation disordering of AlxGa1−xAs superlattices

Data are presented showing that layer disordering of AlxGa1−xAs-GaAs quantum well heterostructures (QWH’s) or superlattices (SL’s) via ion implantation can be effected with a lattice constituent (Al), an inert ion (Kr), or an active impurity (Zn, Si, S, etc.). A doping impurity that diffuses (during annealing) via multiple sites, making column III sites available for Al-Ga interchange, is most effective in layer disordering. However, any implanted ion is itself relatively effective in converting an AlxGa1−xAs-GaAs QWH or SL to bulk-crystal AlyGa1−yAs (0≤y≤x) via damage-induced disordering.