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March 15, 1982Applied Optics

Elimination of interface recombination in oxide passivated silicon p^+n photodiodes by storage of negative charge on the oxide surface

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Authors

JGJon GeistNational Institute of Standards and TechnologyAFA J D FarmerCommonwealth Scientific and Industrial Research OrganisationPMPeter MartinDefence Science and Technology Laboratory

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Geist et al. (1982) studied this question.

synapsesocial.com/papers/6a82a3db1228d2aa8d21e463https://doi.org/10.1364/ao.21.001130
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