Synthesis and Crystal Growth of AIIIBVSemiconducting Compounds Under High Pressure of Nitrogen

Nitrogen under high pressure due to its elevated thermodynamic potential can be used for the synthesis of semiconducting compounds. High temperature growth of III-group metal nitrides from metallic solution is discussed and illustrated by the results of crystal growth of GaN. The growth of III-V crystals from the melts under high N 2 pressure leads to high concentration of substitutional nitrogen. The results of crystal growth experiments are used in the analysis of mixing properties in III-V-N pseudobinary systems.