Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia

Deep levels in vapor epitaxial indium phosphide grown in the presence of ammonia were investigated by transient capacitance spectroscopy. A total of three hole traps associated with nitrogen doping was observed with activation energies of 0.21, 0.3, and 0.45 eV. The traps H(0.21) and H(0.3) are tentatively attributed to a nitrogen-impurity complex. Concentrations of deep trapping states as high as 8×1014 cm−3 were observed in the as-grown layers.