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We have studied the optical properties of GaInAs/GaAs strained-layer superlattices grown along the [100] and [111] crystallographic axes. Absorption and luminescence spectra for the two superlattices show qualitatively different behavior. These differences are attributed to the presence of straingenerated electric fields in the (111) strained-layer superlattice, which have been predicted theoretically but have not been previously observed experimentally.
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Laurich et al. (1989) studied this question.
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