We have found an abrupt drop in the capture efficiency of dopant-induced interfacial states in DDC’s when the stored-charge density exceeds 7×1012/cm2. The constancy of this number with electric field strength and with increasing capture efficiency from increased induced-state density suggests Coulombic repulsion ultimately limits writing efficiency. Erasing characteristics are also explained by barrier lowering due to electron-electron repulsion.
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Thornber et al. (1978) studied this question.
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