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July 1, 1969Journal of Applied Physics

Charge Transport and Storage in Metal-Nitride-Oxide-Silicon (MNOS) Structures

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Authors

DFD. Frohman‐BentchkowskyIntel (United States)MLM. LenzlingerFairchild Semiconductor (United States)

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Frohman‐Bentchkowsky et al. (1969) studied this question.

synapsesocial.com/papers/6a7e8ea8061146f178a6c1f2https://doi.org/10.1063/1.1658181
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