Niobium nitride Josephson junction process development

NbN/MgO/NbN tunnel junction fabrication has been developed using statistical experimental design for insertion into a Josephson LSI (large-scale integration) fabrication technology. Junction deposition conditions have been studied and correlated with structural characterization and junction I-V measurements. Josephson junctions with sum gaps as large as 5.0 mV and junction quality factor of 47 mV have been produced. Current density uniformity, a critical parameter in circuit design, has also been investigated. I/sub c/(O) uniformity at 4.2 K of a 4000 junction array was within sigma =3.1% and was +or-10% across 1 in/sup 2/. The utility of this junction process has been demonstrated by insertion into a standard circuit fabrication process that has produced logic circuit operation above 10 K.>