We report the realization of an inverted cavity (through-substrate) reflection modulator based on an asymmetric Fabry–Perot configuration that utilizes the transparency of the GaAs substrate for operation at wavelengths appropriate for strained-layer GaAs/InGaAs multiple quantum wells. At room temperature, a contrast ratio of 12:1 is realized along with a dynamic range of 20% at an operating wavelength of 9565 Å.
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Hu et al. (1991) studied this question.
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