Optical absorption and modulation behavior of strained InxGa1−xAs/GaAs(100)(x≤0.25) multiple quantum well structures grown via molecular beam epitaxy

We report on the optical absorption and modulation characteristics of strained InxGa1−xAs/GaAs(0.1≤x≤0.25) multiple quantum well (MQW) structures grown on GaAs (100) substrates which also included regions of prepatterned mesas. Sharp excitonic features were realized in samples optimally grown by employing reflection high-energy electron diffraction. High optical quality MQW structures as thick as 1.5 μm are realized. To date, the highest modulation per unit field at low fields (<50 kV/cm) in this system is achieved.