A systematic examination of the influence of each growth parameter on the surface kinetic processes in GaAs molecular beam epitaxy growth has been undertaken employing reflection-high-energy-electron-diffraction intensity dynamics measurement on GaAs(100) As-(2×4) surfaces. It is found that for growth temperature near congruent temperature the recovered growth front of grown GaAs is characterized by the lowest, though metastable, surface step distribution and thus appears optimal for formation of interfaces. The competition between the various growth condition dependent surface kinetic processes and their consequences for the surface and interface morphology are revealed by this systematic study.
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Chen et al. (1986) studied this question.