The temperature dependence of the band gap as a function of the local intensity is taken into consideration for the propagation of light in the multiple-quantum-well structure, GaAs/GaAlAs. With appropriate boundary conditions for heat conduction as well as the field, we derive the conditions for bistability that are due to this mechanism. Analyses of the system parameters in connection with experimental data are also given.
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Li et al. (1986) studied this question.
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