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Magnetic tunnel junctions (MTJs) with an L1/sub 0/-ordered FePt alloy were fabricated and characterized. As a bottom electrode, an in-plane magnetized L1/sub 0/ FePt(110) layer was grown epitaxially on an Au buffer layer. A multiple oxidation process was used for the formation of Al oxide barriers. The L1/sub 0/-FePt/AlO/FeCo MTJ prepared shows tunnel magnetoresistance of 18% and 40% at room temperature (RT) and 4.2 K, respectively. The observed RT magnetoresistance is improved, compared to the previously reported results for the L1/sub 0/-FePt MTJs by a conventional single oxidation process.
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Mitani et al. (2005) studied this question.
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