The properties of a n-n+ GaAs-Gax In1−x As heterojunction grown by molecular beam epitaxy are described. Current-voltage and capacitance-voltage measurements indicate that the junction behaves as a Schottky diode. Significant photoresponse is observed for incident light of wavelength greater than 0.9 μm. Subnanosecond response speeds with full width at half-maximum (FWHM) of ≃250 ps were measured when the diodes were operated as photodetectors.
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Bhattacharya et al. (1982) studied this question.
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