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A fabrication procedure for all-niobium tunnel junctions with oxide tunnel barriers is described. All steps of the tunnel-barrier growth have been characterized in situ with the help of x-ray photoelectron spectroscopy. The chemical composition of the barrier is described, and the properties of devices discussed. The results demonstrate the application potential of these all-refractory junctions.
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Latta et al. (1983) studied this question.
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