Measurements of I-V, G-V, and C-V characteristics were taken on MIS tunnel junctions where M is a metal, I is silicon oxide, and S is hydrogenated amorphous silicon, a-Si: H. The results indicate a peak in the density of states which lies 0.45 eV below the conduction-band edge. The states distribution concluded from the present study is in good agreement with the conclusions based on field-effect measurements.
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I. Balberg (1980) studied this question.
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