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High-quality reproducible Pb oxide tunneling barriers have been grown using thermal oxidation methods. Junctions were made over a conductance range of 104(Ω cm2)−1 by accurately controlling the humidity in a flow of room-temperature oxygen. An inspection of the I-V characteristics in the region eV<2Δ at low temperatures indicates extremely high-quality barriers with no nontunneling processes shunting the tunneling process.
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J. P. Garno (1977) studied this question.
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