The procedures found to lead to good tunnel junctions on the Al5 superconductor Nb-Sn are described. The use of an acetic acid atmosphere and/or oxidized Si layer barriers is shown to be particularly effective. The role of excess Sn in good oxide barrier formatiom on bare Nb-Sn is discussed. These results are related to earlier work using oxidized Si barriers on V3Si.
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Rudman et al. (1979) studied this question.
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