A novel method [discharging current transient spectroscopy (DCTS)] is developed for evaluating traps in insulators, and is then applied to silicon nitride ( SiN x ) films prepared by direct photo-chemical vapor deposition. A single-level trap on the order of 10 16 cm -3 with an emission rate ( e p ) of around 0.3 s -1 and energetically distributed traps on the order of 10 17 cm -3 ·eV -1 with e p <0.1 s -1 are obtained at room temperature.
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Matsuura et al. (1995) studied this question.
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