The spatial distributions of temperature and density in electron-hole plasmas in surface-excited semiconductors are investigated with use of linear irreversible thermodynamics and a microscopic plasma theory. Above a certain threshold the density distribution is dominated by a characteristic density, which increases with temperature. Experimental results for Ge, unstressed Si, and Si under high uniaxial stress are in agreement with the theory.
No takes yet. Share an insight, caveat, or question.
Mahler et al. (1981) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: