Photochemical Reactions at Low Temperatures in CdS Single Crystals

The investigation of glow curves for various conditions of illumination in CdS single crystals (previously annealed at high temperatures) shows that in the temperature range +20 to −100°C new trapping centers arise photochemically. In the same temperature range new “sensitizing” recombination centres, having small capture cross‐sections for electrons, also arise due to a photochemical reaction. This causes the photoconductivity to be increased by a factor of 2 to 100. The investigation of the kinetics of trapping and recombination processes by various methods enables several parameters to be determined for the new trapping and recombination centers.