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An edge-emitting light-emitting diode (LED) with a wide emitting region for optical sensing and information processing which requires slit-shaped light sources is discussed. Through the use of a high-quantum efficiency single-quantum-well structure grown by molecular beam epitaxy an output power as high as 3 mW at an injected current of 100 mA with a 50- mu m-wide mesa structure is achieved at the 780-nm emission wavelength. A uniform and rectangular intensity profile, which is suitable for practical use, is obtained with a mesa-restricted structure.>
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Takagi et al. (1989) studied this question.
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