Recent data on laser-annealed, boron-implanted silicon are analysed, and the results compared with earlier experiments and simple theory. Each substitutional boron decreases the total volume by about 90% of the volume per silicon atom in the perfect crystal.
No takes yet. Share an insight, caveat, or question.
A.M. Stoneham (1979) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: